The tunnelling device is based on the principle of controllable correlated electron tunnelling.

A tunnel-effect tip (24) is formed proximate the tunnel-effect contact and in-line with the rotational path of the tunnel-effect contact (20) when the plate electrode is rotated.

A third polysilicon layer (38) is formed over the tunneling insulator.

The erase operation is done by tunneling of electrons from the sharp tip of the floating gate (42) to the control gate (38) through a tunneling insulator layer (50).

Methods and apparatuses for making a thermotunneling device.

The battery includes an anode, a cathode and a quantum tunneling composite coating.

Tunnel junctions are improved by providing a rare earth-Group V interlayer such as erbium arsenide (ErAs) to yield a mid-gap state-assisted tunnel diode structure.

For example, a tunneling field effect transistor (TFET) includes a homojunction active region formed above a substrate.

The second polysilicon is selectively etched and a tunneling insulator layer is formed thereover.

If felt like a tunnel because there was a light in the distance.

The grid can be fashioned to provide a 'bulging' perspective or a 'tunnel' perspective.

The self-aligned drain diffusion region and tunnel oxide region can be used in a variety of EEPROM cell designs.