A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described.

The surgery apparatus includes lasers in LIV (0.19 to 0.36 micron) and I R (2.8 to 3.2) micron, and non-laser device of radio frequency wave, electrode device, bipolar device and plasma-assisted device.

A bipolar junction device has a base region, an emitter region, and a collector region.

The same thing is also true for bipolar device with extra base-emitter structure in common-collector configuration.

A guard ring structure formed around the periphery of a bipolar semiconductor device.

The semiconductor device (38) can consist essentially of diodes such as two silica diodes (40) on either side of a Zener diode (42), or a custom bipolar device.

A series resistor and its parasitic bipolar device in a well tie (NWELL) permit clamping with reduced current consumption.

A bipolar device having structures of reticulated interface can be tailored for the purposes of controlling and optimizing charge and discharge kinetics.

A bipolar device having perforated structures also provides improved transport properties by removing tortuosity and reducing diffusion distance.

A bias current reference circuit (10) having a diode-connected bipolar device (20) connected in series with an MOS device (22) to develop a reference voltage which is proportional to a bias current.

A bipolar device having graded porosity structures can have improved transport properties because the diffusion controlling reaction kinetics can be modified.

Surprisingly, superior protection is obtained by omitting the metal gate, thereby relying only on the avalanche breakdown of the bipolar device for the opposite-polarity protection.