Embodiments of the present invention include a method of manufacturing a trench polysilicon diode.
For a silicon diode, the boron-doped side is called “P-type silicon” because the introduction of boron deprives the silicon of an electron or introduces an electron “hole.
The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode.
The silicon diode may be formed using a hot wire chemical vapor deposition technique, for example.
An undamaged silicon diode will read 0.5 to 0.7 when it is forward-biased.
The key component is a cooled Si-diode made of high resistivity n-type silicon with an ion implanted p+ layer (11) which is about 1300 Å thick.
Ferranti had been involved in the production of electronic devices including radio valves, cathode ray tubes and germanium semiconductors for some time before it became the first European company to produce a silicon diode, in 1955.
Its linear response over a wide dynamic range and at small signal levels is an advantage over conventional silicon diode rectifier circuits which suffer distortion at low signal levels.
The second component may comprise a low profile silicon photodiode.
Air is either pumped or diffuses into a counting chamber, typically a scintillation cell, an ionization chamber, or a solid state detector (often based on a silicon diode).
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