The microchip coefficient of thermal expansion illustratively is closer to the isolator coefficient of thermal expansion than it is to the package coefficient of thermal expansion.
Thermal expansion of the gripping member is decoupled from thermal expansion of the body, such that thermal expansion of the body is not constrained by the gripping member.
The second component comprises a thermal expansion coefficient which is different from a thermal expansion coefficient of the first component.
The second material has a second coefficient of thermal expansion such that the first coefficient of thermal expansion is 75 -175% of the second coefficient of thermal expansion.
The first coefficient of thermal expansion of the body is greater than the second coefficient of thermal expansion of the insert (246).
The elasticity (ability to recover) of the inventive joint sealants is considerably improved as a result of the combination of the two materials and they are therefore especially suited to substrates with different heat expansion coefficients.
The space absorbs the heat expansion of the plastic flooring such that the deformation of the plastic flooring is prevented.
The body is made of a material with a relatively low heat expansion coefficient α1.
The polymer cover has a coefficient of heat expansion such as to enable several heated domains to be detected.
The area (4) that is subjected to a greater thermal load is provided with a lower heat expansion coefficient (a2) that the area (5) which is subjected to a lower thermal load.
The insert has a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion of the matrix.
The silica-on-silicon substrate includes a silica layer overlying a silicon substrate A coefficient of thermal expansion of the first support component is substantially matched to a coefficient of thermal expansion of the silicon substrate.
The coefficient of thermal expansion of the support (70) is greater than the coefficient of thermal expansion of the growth chamber (50).
The metal substrate has a second coefficient of thermal expansion that nominally matches the first coefficient of thermal expansion of the cell.
The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon.
The coating of the component prevents thermal dilation of the thermoplastic material.
The intermediate element (2) is manufactured in a material which has a neglectable thermal extension at least up to a temperature level, at which the heat treatment is intended to take place.
The thermal expanding element is configured to break the core portion during thermal expanding.
The coefficient of thermal elongation of the housing (2) and the coefficient of thermal elongation of the throttle valve (1) differ by 5 % at the most, in relation to the smallest coefficient of thermal elongation.
The second conductive material has a second CTE between the first CTE and a CTE of the substrate material of the semiconductor die.
The glass core layer has a core coefficient of thermal expansion that is less than a cladding coefficient of thermal expansion.
The thermal expansion component may be heated to cause expansion.
The first end cap and the second end cap have a common rate of thermal expansion that is greater than the coefficient of thermal expansion of the rod.
The structural element includes a material having a coefficient of thermal expansion substantially similar to the coefficient of thermal expansion of the optical fiber.
The die pad is made of a material having a second CTE compliant with the first CTE.
The die pad includes a base and a support structure with a CTE compliant with the first and second CTE.
In embodiments, an insert has a coefficient of thermal expansion greater than the coefficient of thermal expansion of the base.
The first thermal expansion ratio denotes a ratio of a thermal expansion amount of the first substrate to temperature variation.
The second polymeric film substrate has a second coefficient of thermal expansion that is higher than the first coefficient of thermal expansion.
The difference of the thermal expansion coefficient of substrate (20) and the thermal expansion coefficient of the heat radiation dissipation film (30) is not more than 0.1%.
Among these members, the expansion member has the greatest thermal expansion coefficient.
The value of the third thermal expansion coefficient lies between the values of the first and the second thermal expansion coefficients.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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