An ingot is grown generally in accordance with the Czochralski method.

A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided.

Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.

Process and device for pulling crystals (22) according to the Czochralski method.

The solidified metal is then fused and crystallised in a Bridgman or Czochralski method.

It can be grown from a melt by the Czochralski technique.

Many methods of creating synthetic sapphire today are variations of the Czochralski process, which was invented in 1916 by Polish chemist Jan Czochralski.

A control method for use with a Czochralski crystal puller.

An implementation of a Czochralski-type crystal growth has been shown and embodied.

Many methods of manufacturing sapphire today are variations of the Czochralski process, which was invented in 1916 by Polish chemist Jan Czochralski.

A process for the preparation of a silicon single ingot in accordance with the Czochralski method.

In the case of the Czochralski method, the melt and thus the crystal are contaminated by the crucible.

Many methods of manufacturing sapphire today are variations of the Czochralski process, which was invented in 1916 by Polish chemist Jan Czochralski.

Subsequently a monocrystal is obtained by the Czochralski method.

A method and apparatus for growing single crystal of GaAs, etc uses the Czochralski techniques.