In the invention, the doped and relaxed semiconductor layer having a lower lattice parameter than the substrate.
In an embodiment, the second lattice constant and the third lattice constant are different from the first lattice constant.
The first lattice constant differs from the second lattice constant by no more than about 10%.
Growth surfaces (79) are formed on the substrate, and the epitaxial layer (77) is grown as its lattice constant changes from the initial lattice constant to the final lattice constant.
A second monocrystalline layer may include a second material having a second lattice constant different than the first lattice constant.
In this case, a second average lattice constant of the barrier layers (3) is less than a first average lattice constant of the quantum wells (2).
The invention also relates to a method for manufacturing this layered semiconductor substrate.
The unit lattice has a lattice constant of 10.326 ≤ a ≤ 10.335, 6.006 ≤ b ≤ 6.012 and 4.685 ≤ c ≤ 4.714.
The III-nitride layer has a bulk lattice constant a layer.
The variable mismatch layer may be a layer having a strained in-plane lattice constant that substantially matches the unstrained lattice constant of the first layer.
The buffer layer (12) is composed of AlN, and the lattice constant of the a-axis of the buffer layer (12) is smaller than the lattice constant of the a-axis of AlN in a bulk state.
By changing the spacing between the mirrors, the lattice constant of the virtual diffraction grid and thus the direction of radiation of the laser emitted by the virtual diffraction grid are changed.
The size of the recording area is an integral multiple of a lattice constant of a unit lattice of a single crystal structure configuring the magnetic layer.
A channel layer (22) is disposed above the buffer layer and has a concentration of indium to provide a lattice constant of the channel layer that is larger than the substrate lattice constant.
A uniform array for the preparing of optical traps having a selected array lattice constant.
Dislocation (4) is introduced by the thermal treatment, and the lattice constant of the second epitaxial thin film (6) is relaxed to a value approximate to the lattice constant of the bulk crystal of the second substance.
The description relates to a process and device by means of which grid scales of any length can be reproduced with a grid constant in the νm range.
The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates.
The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates.
The semiconductor materials assume a lattice constant and directional orientation of crystal lattice that are substantially similar or identical to those of the seed structures.
Positive (negative) thermal or lattice mismatch is defined as having a larger (smaller) thermal expansion coefficient or lattice constant, respectively, than the substrate.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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