A cadmium telluride (CdTe)-based photovoltaic device includes a CdTe layer including cadmium and telluride.
Cadmium telluride (CdTe) of any purity level; or
Cadmium telluride (CdTe) of any purity level; or
Cadmium telluride (CdTe) of any purity level; or
Cadmium telluride (CdTe) of any purity level; or
poly-CDTE thin layer solar cell
The deposition of the CdTe thin film is performed through sputtering for supplying overlapped RF/DC power to the plurality of CdTe targets.
A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided.
A CdTe solar battery and a method of manufacturing the same are provided.
The cores can comprise CdTe nanocrystals grown in the solution.
The transition structure (5) is a multilayered structure formed by alternately stacking at least one Cu layer (52) and at least one ZnTe layer (51), and a first ZnTe layer (51) is adjacent to the CdTe layer (4).
The single size families are produced for CdSe, CdTe, CdS, CdSeTe, and CdP.
A CdTe solar battery and a method of manufacturing the same are provided.
A method to improve CdTe-based photovoltaic device efficiency is disclosed.
A method of preparing a CdTe solar battery is also provided.
Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof.
This procedure provides clean, stoichiometric, and well-ordered CdTe surfaces.
More particularly, the present disclosure provides improved CdTe photovoltaic devices and related fabrication methods.
A detecting element of this invention has a multilayer structure of Si and CdTe.
The invention relates to the field of CdTe or CdZnTe single crystal production and to an improved solid-phase method of obtaining large CdTe or CdZnTe crystals having an excellent crystalline structure.
The beam may selectively remove an epitaxial layer of CdTe, CdZnTe, or HgCdTe from a GaAs substrate.
A particularly preferred material for the adhesion promoting layer is CdTe, preferably in a single layer.
A method to preparing CdTe surface before forming metal back contact is disclosed.
The Si substrate (3) detects soft X rays and the CdTe substrate (4) detects hard X rays.
The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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