Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries.... No shift in the flat-band voltage of the metal-insulator-semiconductor capacitor elucidates that the observed hysteresis was mainly caused by the influence of localized trap states existing at pentacene grain boundaries....
Potentiometric biosensors based on silicon and porous silicon... The sensor is an Electrolyte–Insulator-Semiconductor capacitor (EISCAP) that shows a shift in the measured CV with changes in the pH of the electrolyte....
On the threshold voltage of symmetrical dg mos capacitor with intrinsic silicon body... Opposite to the behavior of a conventional bulk metal-oxide-semiconductor capacitor realized on a doped substrate, this threshold voltage is shown to decrease with increasing oxide thickness
Suppressed growth of unstable low-fr geox interlayer in ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vaporThe effects of water vapor added in the N2 annealing of high-k HfTiON gate dielectric on Ge metal-oxide-semiconductor capacitor are investigated....
