The transistor can be produced in a HEMT technology or BiFET technology in GaAs.
Performance of the method fabricates the FET portion of the BiFET in a first fabrication environment.
Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment.
Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed.
Method for producing the circuit wherein the pseudomorphic high-electron-mobility transistors and the hetero-junction bipolar transistors are produced using a GaAs BiFET technology process.
He has also contributed to the development of SAMOA, at Yahoo Labs in Barcelona.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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