A Schottky baroer silicon carbide device has a Re Schottky metal contact.

The trench may be filled with the Schottky barrier material composed of Ti/TiN or a tungsten metal disposed therein for constituting the Schottky barrier.

A Schottky barrier diode and process of making is disclosed.

The first junction is a Schottky barrier with respect to a carrier In some instances a metal protective coating covers all or a portion of a surface of the first lead.

A method of manufacturing a Schottky-barrier phototransistor is also provided.

The second layer may be a metal and the electrical energy barrier may be a Schottky barrier.

The tunneling current through the first Schottky barrier junction or the second Schottky barrier junction is substantially controlled by the voltage of the semiconductor base region (833).

One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB (see figure).

One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB .

One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB.

A second semiconductor region (2) is advantageously formed directly below the Schottky metal (4), with the purpose of adjusting the level of the Schottky barrier.

A low Schottky barrier semiconductor structure is provided.

A Schottky barrier height between the first semiconductor and ferromagnetic materials is larger than a second Schottky barrier height between the ferromagnetic and second semiconductor materials.

The other multi-layer electrode forms a Schottky barrier layer with the active material layer.

The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate.