The at least one barrier layer may have a wider energy band gap than an energy band gap of the at least one active layer.
One of the PV devices may have an energy band gap that is larger than or equal to an energy band gap of the other of the PV devices.
The first energy band gap can be greater than the second energy band gap by at least about 0.5 eV, or 0.6 eV, or 0.7 eV.
The highest filled energy band is called the valence band.
The superlattice may also have a common energy band structure therein.
The next higher band of allowed energy levels, called the conduction
Each sensor has a filter which passes a different selected band of energy.
An energy gap in the unzipped end of the carbon nanotube may be less than an energy gap in a region of the carbon nanotube outside of the unzipped end region.
The present inventors describe examples of such fibres that guide light by virtue of a true photonic band-gap in a hollow core region having a boundary at the interface between the hollow core and a photonic band-gap cladding.
On the basis of this imaging data, a CT image is reconstructed for each energy band.
Each s energy level can hold a maximum of 2 electrons.
Dopants such as carbon can be added to engineer the band gap of the nanotubes.
The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV.
A spectrum detection module identifies dominant spectrum energy frequency by detecting the dominant spectrum energy band present in spectrum of sound energy.
The present invention relates to a semiconductor device in which energy band gap can be reversibly varied.
In one form, the cyclometalated iridium complex includes bandgap lowering ligands, for example aryl quinoline.
It is shown that a saturated energy band does not participate in the conduction.
A vacant electron energy state near the top of an energy band in a solid; behaves as though it were a positively charged particle.
In another form, the cyclometalated iridium complex includes bandgap widening ligands, for example aryl triazole.
Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3eV.
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