The first diode is an avalanche breakdown diode having an avalanche breakdown voltage lower than or about equal to a breakdown voltage associated with the base and the collector of the bipolar transistor.
impact avalanche and transit diode (IMPATT—IMPact Avalanche and Transit Time).
Another mechanism that produces a similar effect is the avalanche effect as in the avalanche diode.
The transmitter includes an IMpact Avalanche Transit Time (IMPATT) diode oscillator, a mixer, a filter and an amplifier.
The constant voltage element includes a varistor (6), a Zener diode (7), an avalanche diode, and a combination of the Zener diode (7) and a self-turn-off semiconductor element such as, for example, an IGBT and a MOSFET.
A current source control loop circuit is connected to the injection laser diode and establishes a fixed current though the injection laser diode.
A laser driver circuit includes an injection laser diode.
Techniques and apparatus for using single photon avalanche diode (SPAD) devices in various applications.
A photon detector includes a semiconductor device (10), such as a Schottky barrier diode, which has an avalanche breakdown characteristic The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device.
In particular, the passive switching circuit preferably comprises a spark gap, thyristor and avalanche diode, breakover diode, discharge tube, or a thyristor operated as breakover diodes.
As a result, the amount of light received on the GAPD (2) can be maintained uniformly.
No hot carrier is trapped by the protective film (9) upon reverse breakdown.
Furthermore, the device additionally has modulation means which can be used to modulate a noise signal which is generated by the at least one avalanche diode (Q2, Q4).
In this case, the TJBS consists of a combination of Schottky diode and PN diode.
The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal.
They can be found under the generic name "Transient Suppressors" and are of various types: metal oxide varistor, silicon avalanche diode, and surge suppressor zener diode.
The fourth metal electrode is connected to the second diode and the fourth diode.
They can be found under the generic name "Transient Suppressors" and are of various types: metal oxide varistor, silicon avalanche diode, and surge suppressor zener diode.
The diode can be either air-cooled or broadband.
According to the invention, the semiconductor assembly of the Schottky diode comprises a combination of Schottky diode and PN diode.
The injection locking emission is pulsed to provide locking pulses that are attenuated and then coupled to a laser diode.
The diode may be a carbon/insulator/carbon diode.
The laser can be a diode laser, while the diode can be a light-emitting diode (LED).
The LED module (10) may be a LED chip or a LED.
The low voltage structure is a diode, preferably a Schottky or barrier diode.
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