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Plasma etching of polystyrene latex particles for the preparation of graphene oxide nanowallsGraphene oxide nanowalls were prepared by casting a water dispersion of polystyrene latex particles onto a graphene oxide film followed by tetrafluoromethane plasma etching....
général - core.ac.uk - PDF: doaj.org
During plasma etching... A fundamental understanding of the origins of the surface roughness and LER formation during plasma etching process is thus necessary to optimize the IC manufacturing process and prevent device failure....
Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process... The authors have demonstrated that it is possible to use inductively coupled plasma etching systems in order to etch nanometric layers, despite the fact that these systems are designed for deep and fast etching....
 PDF: core.ac.uk
Predicting time-to-failure of plasma etching equipment using machine learningPredicting unscheduled breakdowns of plasma etching equipment can reducemaintenance costs and production losses in the semiconductor industry....
 PDF: arxiv.org
A facile, low-cost plasma etching method for achieving size controlled non-close-packed monolayer arrays of polystyrene nano-spheres... Plasma etching, and in particular high-frequency plasma etching, is the most commonly used method to obtain non-close-packed monolayer arrays....
 PDF: doaj.org

Synonymes et termes associés français

Traductions en contexte français - anglais

L'invention concerne un procédé et un appareil pour générer des plasmas pour un dépôt chimique en phase vapeur, pour une attaque par plasma et, en particulier, pour la formation par dépôt de films de diamant sur une grande surface.

A method and apparatus for generating plasmas for chemical vapor deposition, etching, etc., and particularly for the deposition of large-area diamond films, comprising a chamber (10) defined by a base plate (12), canopy (14) and O-ring (16).

métallurgie et sidérurgie - wipo.int


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