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atome implanté

implanted atom

électronique et électrotechnique - iate.europa.eu

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Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4h-sic... After high-temperature annealing at 1700 °C, however, most DLTS peaks disappeared, and two peaks, IN3 and IN9, which may be assigned to Z1/2 and EH6/7, respectively, survive with a high concentration over the implanted atom concentration....

général - core.ac.uk - PDF: repository.kulib.kyoto-u.ac.jp

Cascade annealing of tungsten implanted with 5 kev noble gas atoms: a computer simulationThe trapping of vacancies by implanted atoms is calculated....

PDF: zernike.eldoc.ub.rug.nl

implanted ion

électronique et électrotechnique - iate.europa.eu

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Point-source model for highly-accurate analytical 3d calculation of ion implanted dopant profiles... Implanted ion profile is obtained by integrals, over implanted surface, of point-source implanted profiles which are calculated by a well-tuned Monte Carlo simulation and are ...

général - core.ac.uk - PDF: kurepo.clib.kindai.ac.jp

Sio2 etch rate modification by ion implantation... It is reported that nuclear collision of implanted ion with target ions produces a relevant rearrangement of in SiO2 target network: Si and O target atoms are moved fro

PDF: www.scientific.net

Influence of irradiation spectrum and implanted ions on the amorphization of ceramics... Si3N4 exhibited intermediate behavior; irradiation with Fe{sup 2+} ions at RT produced amorphization in the implanted ion region after damage levels of {similar_to}1 dpa....

PDF: digital.library.unt.edu

Determination of 2d implanted ion distributions using inverse radon transform methodsTwo methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets....

PDF: doc.utwente.nl