An alloy with two components is called a binary alloy; one with three is a ternary alloy; one with four is a quaternary alloy.
The sputter target deposits nickel from a binary alloy.
In some embodiments, the Pt-Ni catalyst is a Pt-Ni binary alloy.
Identifying a stable phase of a binary alloy comprises a solute element and a solvent element.
There is disclosed medical devices, such as stents, guidewires and embolic filters, comprising a binary alloy of titanium and one binary element selected from platinum, palladium, rhodium, and gold.
It is a binary alloy of copper and zinc, combining these metals in different proportions, which practically limits range from the following:
If there is a mixture of only two types of atoms, not counting impurities, such as a copper-nickel alloy, then it is called a binary alloy.
If there is a mixture of only two types of atoms not counting impurities such as a copper-nickel alloy, then it is called a binary Metals and alloys.
If there’s a combination of only two forms of atoms (not counting impurities) such as a copper-nickel alloy, then it is known as a binary alloy.
If there is a mixture of only two types of atoms (not counting impurities) such as a copper-nickel alloy, then it is called a binary alloy.
If there’s a combination of only two varieties of atoms (not counting impurities) such as a copper-nickel alloy, then it is known as a binary alloy.
A binary alloy catalyst comprising platinum and tantalum, wherein the tantalum is present in the alloy at 15 to 50 atomic% and a phosphoric acid fuel cell comprising such a catalyst is disclosed.
A binary, boron-based alloy as a source for field-emission-type, ion-beam generating devices, wherein boron predominates in the alloy, preferably with a presence of about 60 atomic percent.
Gallium arsenide (GaAs), a binary alloy with semiconductive properties, capable of ensuring very high efficiency, due to the property of having a direct gap (unlike the silicon).
Gallium arsenide (GaAs), it is a binary alloy with semiconductor properties, able to guarantee very high yields, due to the property of having a direct gap (unlike silicon).
Gallium arsenide (GaAs), it is a binary alloy with semiconductor properties, able to guarantee very high yields, due to the property of having a direct gap (unlike silicon).
Gallium arsenide (GaAs), a binary alloy with semiconductive properties, capable of ensuring very high efficiency, due to the property of having a direct gap (unlike the silicon).
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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