A second thin layer having a buried, second electrode is bonded to the first thin layer.
The combination of at least one thin layer energy storage system with at least one thin layer energy converter is disclosed.
The anode (2) comprises a stack of layers consisting of a first thin layer (3) and a second thin layer (4), said second thin layer being disposed between the electrolyte (1) and the first thin layer (3).
The reference wafers (18) advantageously consist of a thin layer of active material deposited on a thin separating layer, itself deposited on a thin layer substrate.
The electrically polarized dielectric thin layer may be a ferroelectric thin film, which may comprise PZT or PZLT.
Also disclosed are an antistatic thin film, an ultraviolet ray blocking thin film and a transparent electrode thin film, each of which comprises the zinc oxide thin film.
Provided are a thin film and a method for manufacturing a thin film.
The multilayered thin film includes an organic semiconductor thin film formed on an insulating polymer thin film.
The crystalline thin film can be obtained by crystallizing an amorphous thin film and/or a thin film with low crystallinity for a short time while maintaining the temperature of the thin film low.
The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.
The capacitive device has a conductive film and a solid-dielectric film.
The film may be enhanced by spin-coating a smoothing layer on the film and/or doping the film to enhance conductivity.
The invention relates to a method for producing a thin-layer component, especially a thin-layer high pressure sensor, and to a corresponding thin-layer component.
Alternatively, dopants may be introduced in an organic film (16) by diffusion from one layer (18, 19) into the film (16).
The metallized polyimide film exhibits an improved jointing strength between a polyimide film and a metal layer.
The crystal liquid layer is constituted by a liquid crystal film, preferably by a cholesteric liquid crystal film.
Disclosed is a wafer processing film comprising an adhesive layer and a dicing/die bonding film that is composed of a sticky film.
An organic thin film light emitting transistor using such organic thin film transistor is also provided.
The ferroelectric film (28) is constituted of a thin film of a mixed crystal Sr2(Ta1-xNbx)2O7.
As the stretched plastic film there may be used, e.g., a uniaxially stretched polypropylene film.
The information in the second magnetic film is magnetically transferred to the first magnetic film.
An organic thin film light emitting transistor using such organic thin film transistor is also provided.
A light-emitting element comprises an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4).
A process and system for processing a thin film sample (e.g., a semiconductor thin film), as well as the thin film structure are provided.
The photosensitive resin composition is used to produce a resin film, an insulating film, and a printed wiring board covered with an insulating film.
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