A first grid electrode extends across the downstream end of the ionization chamber and a second grid electrode is slightly downstream from and parallel to the first grid electrode.

A gate electrode is formed on the gate-insulating film.

The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric.

A gate electrode is disposed upon the gate insulation film.

The device includes a split gate structure having a trench, a gate electrode and a source electrode.

The height of the second gate electrode (106B) is lower than the height of the first gate electrode (106A).

The thin-film transistor comprises a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode.

The gate cavity is filled with a gate dielectric and a gate electrode.

The gate stack includes a gate dielectric layer (102) and a gate electrode (104), the gate dielectric layer (102) is on the channel region (1002), the gate electrode (104) is on the gate dielectric layer (102).

A first gate electrode is embodied next to the floating gate and a second gate electrode is embodied next to the tunnel barrier arrangement.

The transistor includes a second gate electrode for controlling the threshold voltage in addition to a normal gate electrode.

The gated electrode structure may comprise a gate electrode biased appropriately with respect to a working electrode.

The driving TFT includes at least a substrate, a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode.

  On the gate insulating film and the field oxide film, a second gate electrode connected to the first gate electrode is continuously formed.

The transistor having a gate electrode disposed over a gate dielectric.