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Microstructural characterization of epitaxial cubic silicon carbide using transmission electron microscopyMicrostructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission electron microscopy (TEM)....
général - core.ac.uk - PDF: www.scientific.net
switch-back epitaxy ’ as a novel technique for reducing stacking faults in 3c-sicAbstract: A new technique that reduces stacking fault (SF) density in 3C-SiC, termed switch-back epitaxy (SBE), is demonstrated regarding its effects on morphological and electrical properties....
Photocurrent reduction can be alleviated by green switch-back pulses.... (B) Following excitation by a blue light pulse, ChR2(C128A) photocurrents could be inactivated by a green switch-back pulse....


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