A varactor such as a GaAs varactor may be used.
The anode of a first varactor is connected to the first node while the anode of a second varactor is connected to the second node, and the cathode of the first varactor is tied to the cathode of the second varactor.
The present invention provides an apparatus (200) comprising a varactor (210) and at least one external high-Q fixed capacitor (225) combined with the varactor (210) to improve the Q factor of the varactor (210).
The varactor's capacitance is a function of a tuning potential (22) applied at a first terminal of the varactor.
The varactor element (Dl; D2) can be used in a narrow tone spacing varactor stack arrangement, in which two varactor elements (Dl; D2) are connected in an anti-series configuration.
Varactor Diode Varactor diode is called varicap or variable capacitance diode.
The arrangement includes a flexible sealing member with first and second separate electrically conductive members which are connected by a varicap diode.
Said devices can be embodied in the form of a voltage-controlled adjustable capacitor, varicap, transistor and transmission line.
The invention relates to semiconductor devices, specifically varicap (varactor) semiconductor devices whose reactance can be altered by varying the voltage.
IC2 is a voltage-controlled oscillator (VCO) with integrated varactor (a.k.a. varicap diode).
A nanowire varactor diode (200) and methods of making the same are disclosed.
The antenna can be matched automatically by using varactor diode or ferrodielectric capacitor.
The varactor diode (200) thereby exhibits variable capacitance as a function of the applied bias.
The low noise amplifier (32) is connected directly to the pair of varactor diodes (24, 25).
Said tuning resonant circuit comprises a varactor diode having a capacity which varies according to the applied voltage.
The varactor element forms part of a tank circuit.
Said varactor is particularly suitable for LC VCOs.
Thereby, varactorless tuning of an oscillation frequency can be achieved.
The main varactor is used for fine tuning.
The present invention provides a varactor (22) that has increased tunability and a high quality factor Q as well as a method of fabricating the varactor (22).
A ferroelectric varactor suitable for capacitive shunt switching is disclosed.
A third gate node (243) for the third varactor (203) and a fourth gate node (244) for the fourth varactor (204) are coupled to a second input node (213).
A computer may be connected to the varactor to provide for automated tuning.
A ferroelectric varactor suitable for capacitive shunt switching is disclosed.
The apparatus comprises: having a wave-absorbing metamaterial, arranged on each metamaterial unit an electrical reactance-adjustable varactor component and a main control unit for use in adjusting the varactor component.
A zero-bias voltage version of the varactor is also described.
The tank circuit can also include a varactor connected to a respective reactance and a control input is provided to tune the oscillating RF output signal.
The varactor can include built-in DC blocking capacitors.
A ferroelectric varactor suitable for capacitive shunt switching is disclosed.
The varactor array has a first array of varactor cells having incremental capacitance values and a second array of varactor cells having equal capacitance values.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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