Each memory device includes a memory, such as, for example, NAND-type flash memory, NOR-type flash memory, random access memory and static random access memory.

The memory may be a nanoelectronic random access memory (RAM).

The RAM interface arbiter (112) communicates with the RAM bus (120) to a RAM associated with an adapter.

A dynamic random access memory device comprises and array of memory cells each of which has an output line associated therewith.

The memory appliance (130) includes random access memory (RAM) (170).

The memory appliance (130) includes random access memory (RAM) (170).

The first memory (101) may be a ternary content addressable memory (TCAM) and the second memory may be a static random access memory (SRAM).

A data structure is held in a memory such as a RAM, and as messages are received in the node, they are assigned an expiry time and a state.

Data is reproduced from a ROM (8), and data is recorded in a RAM (9) simultaneously by using a concurrent ROM/RAM recording medium (3).

A memory device in a 3-D read and write memory includes memory cells.

A memory device in a 3-D read and write memory includes memory cells.

A memory device in a 3-D read and write memory includes memory cells.

The lookup table is implemented in dynamic random access memory (DRAM) with a portion implemented as static random access memory (SRAM) (202, 204).

In response to a request, the file is transferred to a second memory of the device, the second memory comprising a random-access memory.

A magnetic random access memory provided with a plurality of magnetic memory cells (1) is used.