The method creates various bump structures by varying an angle between a line from a reference bump to a first bump and a line from the reference bump to a second bump.
The bump layer has a proximal segment, and a bump section.
The arm includes a first mating bump (30a) and a second mating bump (30b).
The bump section has a transition zone at the proximal end of the bump section.
A nanostructure bump is formed on a die.
The computing device may include an upper shell comprising an upper boss protruding from the upper shell, the upper boss defining a cavity.
A bump is formed over the second wirebond, and the bump is offset from the second wirebond.
The coupling includes a bump (210) and a pad (220).
The can also includes a cap (4) with a dent (5).
The fastener includes a boss with a threaded opening on one of the jaws, which boss is received by an opening in the other of the jaws.
[Solution] A bump bonding pad (61) is disposed at an upper surface of a substrate (45), and a bump (70) of a circuit element (43) is connected to the bump bonding pad (61).
A under-bump metallization layer is disposed in the opening and a solder bump overlies the metallization layer.
In one embodiment, the system includes a decoupling capacitor that is disposed between a Vcc electrical bump and a Vss electrical bump.
The end of the protrusion defines an operative area (4).
The dent is reduced by means of a directed force (FO).
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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