The boron compound used in the chemical treatment of this invention is boron halide, preferably boron trichloride.
Deposit, transfer and distribution of boron trichloride (BCl3)
The present invention relates to an improved process for the in situ preparation of diisopinocampheylchloroborane which comprises reacting sodium borohydride and boron trichloride with α-pinene.
Boron trichloride is, however, produced industrially by direct chlorination of boron oxide and carbon at 500 °C.
Disclosed are a fluidized bed without a sieve plate and a method for preparing boron trichloride using same.
A method and system for etching a hafnium containing material using a boron tri-chloride (BCI3) based process chemistry is described.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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