A metal semiconductor field-effect transistor (MESFET) is disclosed that exhibits reduced source resistance and higher operating frequencies.

Accordingly, three-terminal control is provided by the source and gate electrode of the silicon MOSFET and the drain of the silicon carbide MESFET (or JFET).

A silicon carbide switching device includes a three-terminal interconnected silicon MOSFET and silicon carbide MESFET (or JFET) in a composite substrate of silicon and silicon carbide.

MESFET gate voltage

An odd order MESFET frequency multiplier which outputs a desired odd harmonic of a fundamental tone.

Higher drain biases are supported by the formation of a depletion region in the silicon carbide MESFET (or JFET).