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transistor bipolaire hétérojonction

heterojunction bipolar transistor

électronique et électrotechnique - iate.europa.eu

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Sige microwave power heterojunction bipolar transistorWe have developed a simple planar process compatible with Si process, and fabricated the SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications....

général - core.ac.uk - PDF: www.scopus.com

A stripe-geometry ingaasp/inp heterojunction bipolar transistor suitable for optical integrationA stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time....

PDF: authors.library.caltech.edu

Inp heterojunction bipolar transistor amplifiers to 255 ghzTwo single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology....

PDF: hdl.handle.net

Study of cutoff frequency of high collector current density in sige single-heterojunction bipolar transistorThe cutoff frequency performance of an NPN Si/SiGe/SiGe Single-heterojunction bipolar transistor (SiGe SHBT) at high collector current densities has been analyzed using a 2-dimensional MEDICI device simulator....

PDF: core.ac.uk

Open access frequency up-conversion technique for radio over fiber (rof) remote antenna unit configuration... The system uses photodiode and heterojunction bipolar transistor (HBT) to detect and up-convert the received IF modulated optical signal....

PDF: benthamopen.com

HJBT

électronique et électrotechnique - iate.europa.eu

HBT

électronique et électrotechnique - iate.europa.eu

Publications scientifiques

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Energy dependence of the freeze out eccentricity from the azimuthal dependence of hbt at star... Hanbury-Brown-Twiss (HBT) interferometryallows to determine the size of pion emitting source regions....

électronique et électrotechnique - core.ac.uk - PDF: arxiv.org

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An advanced gaas/lngap hbt mmic processAn advanced, general purpose GaAs/lnGaP HBT process has been developed at GEC Marconi Materials Technology Ltd....

communication / électronique et électrotechnique - core.ac.uk - PDF: amsacta.unibo.it

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A direct coupling between the semiconductor equations describing a gainp/gaas hbt in a circuit simulator for the co-design of microwave devices and circuits... The semiconductor device equations adopted concern a GaInP/GaAs HBT for power applications....

électronique et électrotechnique / politique des transports / recherche et propriété intellectuelle - core.ac.uk - PDF: amsacta.unibo.it

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A new inp/ingaas double heterojunction bipolar transistor (dhbt) with a step- graded inalgaas collector structureOver the past years, InGaAs-based heterojunction bipolar transistors (HBTs) have attracted significant interest for microwave and low-power digital applications due to excellent transport properties of the InGaAs...

électronique et électrotechnique - core.ac.uk - PDF: conf.ncku.edu.tw