Each memory cell includes a high Vt transistor and a low Vt transistor.

In this way, the dependence of the grid threshold-voltage on the anode voltage is eliminated.

The protective circuit comprises a threshold detector that derives a threshold voltage from the voltage on the pad.

The comparator compares a voltage at the input against the threshold voltage and causes an overcurrent signal to be generated at the output when the voltage at the input exceeds the threshold voltage.

The control transistor (M) has a higher threshold voltage level than the voltage threshold level(s) of the transistors that comprise the switching logic blocks (101, 103).

A threshold voltage set region is formed by placement of a threshold voltage offset plane positioned above the screening region.

A second voltage comparator (22) compares a second detected voltage (Vx2) with a second threshold voltage (Vth2).

A first voltage comparator (20) compares a first detected voltage (Vx1) with a first threshold voltage (Vth1).

Threshold voltage monitoring circuitry that includes the MOS transistor is used for measuring the effective threshold voltage of the MOS transistor and for generating a second voltage signal.

The first read threshold voltage is different from the second read threshold voltage, and the first technique is different from the second technique.

A detected voltage d is compared to a threshold voltage s selected from a plurality of threshold voltages preset in the device.

The reference voltage includes the threshold voltage of this transistor and the drop voltage of the group of voltage drop devices as the constituents.

The transistor(s) have a threshold voltage and receive a bias voltage.

Each of a plurality of flash memory cells is programmed to a respective one of L≥2 threshold voltage states within a threshold voltage window.

The second converter module is disabled by the sensor module when the first DC voltage is below a second threshold voltage that is lower than the first threshold voltage.