The clamp output signal is employed to limit an input voltage from exceeding the clamp voltage threshold.

The voltage clamp clamps any overvoltage to a clamping voltage.

Multiple epitaxial layers support the blocking voltage of the diode, and each of the multiple epitaxial layers supports a substantial portion of the blocking voltage.

Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and

Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and

Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and

Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and

Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and

A circuit includes a comparator to generate a clamp output signal by monitoring an output voltage and a reference voltage that sets a clamp voltage threshold for the output voltage.

The integrator accumulates the difference current onto the hold capacitor, where it becomes the hold voltage.

Then, when the turn-on operation of the upper arm (21u) is completed, the off-voltage control circuit immediately controls the voltage to be outputted from the gate drive power supply (103u) to return to the predetermined off-voltage.

A high blocking voltage, a precisely short channel and a well-defined threshold voltage are obtained.

The input voltage and the DC blocking voltage are connected to a differential amplifier circuit, and any difference in voltage is signaled.

The scaled voltage is then compared with the well defined turn-off voltage (52) to determine the amount of energy remaining in the battery.

Thereby the blocking voltage of the semiconductor chips is reduced.