Lithium tantalate wafers, undoped
Lithium tantalate wafers, undoped
Lithium tantalate wafers, undoped
Lithium tantalate wafers, undoped
Lithium tantalate wafers, undoped
The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide, and aluminum oxide.
The invention concerns components with interface sound waves made of lithium tantalate.
There is provided an optical material of lithium tantalate characterized in that in the lithium tantalate the molar composition ratio of lithium oxide to tantalum oxide (LiO2/Ta2O5) is in the range of 0.975 to 0.982.
A second electrode (52) is formed on top of the ultra-thin bismuth tantalate layer (51).
One particular material, lead scandium tantalate Pb(Sc0.5Ta0.5)O3, is described.
Further, the lithium tantalate single crystal has an excellent electric conductivity or volume specific resistance.
In some cases, this can be used as an ideal substitute for lithium tantalite and LiTaO3.
For some uses it can be replaced by lithium tantalate, LiTaO3.
Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal.
Further, the lithium tantalate single crystal has an excellent electric conductivity or volume specific resistance.
The invention relates to a method for producing ferroelectric strontium bismuth tantalate comprising the compositions SrxBiyTa2O9 (SBT) or SrxBiy(Ta, Nb)2O9 (SBTN).
An epitaxial layer of crystalline piezoelectric material such as lithium niobate and lithium tantalate can be grown overlying a silicon wafer by first growing an intermediate strain-relief layer on the silicon wafer.
The sensors are made of lithium tantalate with an X cross-section and orientations of Y + 112° and Y + 130° for the two resonators thereof.
The process has been found to be particularly excellent for making BST, strontium bismuth tantalate, and strontium bismuth niobate.
Prior to the final crystallization anneal, the first electrode (48), the strontium bismuth tantalate layer (50) and the second electrode (52) are patterned.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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