Oxygen is supplied to the etchant for oxidizing Cu(I) ions to Cu (II) ions.
The remaining copper (16), protected by the photoresist layer (20), remains unexposed to the etchant (32, 42).
The remaining portion of the spent etching solution can then be regenerated to produce a fresh batch of etching solution.
This etching solution contains a silicofluoric acid.
The thus machined component surface is then cleaned in an etching solution.
The methods include providing a glass-ceramic article having a non-damaged surface, applying a chemical etching solution to the non-damaged surface, and removing the chemical etching solution.
By the subsequent attack of an etching solution the etching barrier layer (8) is locally removed from the conducting layer (5) in the region of the openings (9).
germanium(111)EPD etch
germanium(100)EPD etch
silicon EPD etch
silicon etch-pit-density etch
The copper etching solution comprises an acidic aqueous solution containing cupric ions, halide ions, and a non-ionic surfactant.
In one example, tight control over temperature and water content of an acidic etching solution is provided.
Also disclosed is a method for etching a titanium-containing layer formed on a silicon substrate or a silicate glass substrate using such an etching solution.
The proposal is for a process for structuring a single-crystal silicon substrate by wet-chemical etching with an anisotropic etching solution.
The present invention relates to methods for treating metallic waste contaminated by radionuclides, wherein one of said methods comprises deactivating the metallic waste in a liquid medium using an etching solution, a cleaning solution and water.
At that time, the author suggested changing the alkali etching solution.
The membrane is produced using an etching solution which is provided in one of the chambers.
Said etching solution contains active etching ions which etch the organic polymer.
Provided are: an etching solution which can minimize side etching without impairing the straightness of copper wiring; a replenishing solution for the same; and a method for forming copper wiring.
The method is carried out with an etching solution having a pH above 1.5 and a high copper content.
Embodiments of the invention provide a processing system and a method for processing a substrate with a heated etching solution.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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