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électronique et électrotechnique - iate.europa.eu
électronique et électrotechnique - iate.europa.eu
Junction temperature and thermal resistance of ultrafast sub-micron inp/ingaas shbtsThis work reports experimental data for the thermal resistance and junction temperature of high-performance InP/InGaAs single heterojunction bipolar transistors (SHBTs)....
général - core.ac.uk - PDF: citeseerx.ist.psu.edu
Electron affinity and bandgap optimization of zinc oxide for improved performance of zno/si heterojunction solar cell using pc1d simulationsFor further uptake in the solar cell industry, n-ZnO/p-Si single heterojunction solar cell has attracted much attention of the research community in recent years....
 PDF: doaj.org
Submicron inp–ingaas single heterojunction bipolar transistors with � „ of 377 ghzAbstract—Submicron InP–InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron...
Photoluminescence characterization of single heterojunction quantum well structuresA photoluminescence emission band at 830 nm has been detected in single heterojunction quantum well structures (modulation‐doped structures) in the range of 250–400 K....

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