Silicon derived from silicon powder is plasma sprayed across the seam and forms a silicon coating (44) that bonds to the silicon members on each side of the seam to thereby bond together the members.

A thin membrane including silicon (680) is formed on a silicon body (25) by bonding a silicon-on-insulator substrate (685) to a silicon substrate.

The transparent inorganic material is silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride or the like.

The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide.

The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof.

The silicon phases are mainly formed of silicon atoms.

The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect.

The present invention provides for methods of purifying silicon, methods for obtaining purified silicon, as well as methods for obtaining purified silicon crystals, purified granulized silicon and/or purified silicon ingots.

The invention further relates to corresponding silicon ingots, silicon wafers and silicon photovoltaic devices.

The silicon/silicon carbide-containing waste material is pelletized.

Polysilicon is formed by pyrolytic decomposition of a silicon-bearing gas and deposition of silicon onto fluidized silicon particles.

Silicon containing by weight 99,99 % of silicon

A first gas etches silicon, while a second gas etches silicon oxide but scarcely etches silicon.

The process can be repeated multiple times to deposit one or more of a mixed silicon oxide/silicon nitride film and a mixed silicon oxide/silicon film.

In the elimination step, some of the silicon monoxide and some of the silicon dioxide are eliminated from the silicon micro particles, silicon monoxide and silicon dioxide contained in the composite powder.