The one or more diodes may be thin film diodes comprising at least one layer of p-type semiconductive material and at least one layer of n-type semiconductive material.

A type of semiconductor where electrons are the majority charge carriers.

Further, it is desirable that the electron-emitting surface of the cathode is composed of an n-type or p-type diamond semiconductor.

The NOR-type nonvolatile semiconductor memory includes an island-shaped semiconductor layer formed on a semiconductor substrate.

The electron extraction layer (3) includes an n-type semiconductor, and the thickness of the electron extraction layer (3) is 0.1-15 nm.

The emitter region is formed of an n-type semiconductor, is in contact with the insulating film, and is in ohmic contact with the emitter electrode.

In order to manufacture an intermediate-band solar cell, it is necessary to connect the intermediate band material (1) with an n-type semiconductor (2) and another p-type semiconductor (3), which will act as emitters.

The transparent electrode layer has a high impurity concentration toward the transparent substrate and a low impurity concentration toward the n-type compound semiconductor layer.

In a n-type semiconductor the last band occupied by the electrons supplied with an impurity (donor) is the conduction band.

The substrate is electrochemically etched with a low current during illumination to form at least one sample reservoir, each sample reservoir being formed at a respective lit region on the n-type semiconductor substrate.