Thus changing the semiconductor into n type or p type semiconductor.

A doped semiconductor is much more like a conductor than an undoped semiconductor.

The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide.

An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors.

At absolute zero temperature, a semiconductor acts as a perfect insulator.

In intrinsic semiconductors, the number of electrons and hoes are equal.

In an intrinsic semiconductor, the number of free electrons is equal to the number of holes.

In an intrinsic semiconductor, the number of free electrons and holes are equal.

In these semiconductors, number of free electrons and number of holes are unequal

In the pure silicon crystal, the number of free electrons and holes is equal.

In an intrinsic semiconductor, the number of holes and free electrons are equal.

In intrinsic semiconductor number of free electrons is equal to number of holes.

The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type regions extending along side surfaces of said semiconductor bulk.

During the formation of the single crystal, metered quantities of foreign substances are introduced in order to transform the intrinsic semiconductor into P or N type semiconductors.

For high purity oxide semiconductors, the Fermi level is located in the middle of the forbidden band under ideal conditions.