The method provides an improved cellulosic web haing improved wet/dry tensile ratio.
The resistance values, in ascending order, are: the resistance in the low-resistance state; the resistance in the second high-resistance state; and the resistance in the first high-resistance state.
The memory element is capable of switching from a prescribed low resistance state to a prescribed high resistance state, and from a high resistance state to a low resistance state.
Each variable resistance layer may have an associated high resistance state and an associated low resistance state.
The OTP/MTP structure can be programmed in one of three states, a preprogrammed high resistance state, and a programmable low resistance state and a programmable very high resistance state.
A variable electric resistor is arranged to be able to assume a first state with very low resistance and a second state with very high resistance.
A high resistance indicates a blown condition and a low resistance indicates an umblown condition.
A resistance storage element stores a high resistance state and a low resistance state, and performs switching between the high resistance state and the low resistance state by voltage application.
The switchable resistor memory element has the property of having at least two stable resistance states, for example a high- resistance state and a low-resistance state.
The device alternates between a low resistance state and a high resistance state by application of an electrical voltage.
A bistable electrical device that is convertible between a low resistance state and a high resistance state.
The resistive-switching component has multiple resistance values from a high resistance state to a low resistance state, and each resistance value corresponds to a storage value.
The variable resistance layer transitions between a high resistance state and a low resistance state according to the polarity of electrical pulses applied.
A resistance storage element for storing a high resistance state and a low resistance state and switching between the high resistance state and the low resistance state by applying a voltage.
Each crossbar junction is independently switchable between a high-resistance state and a low-resistance state.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Traduction Translation Traducción Übersetzung Tradução Traduzione Traducere Vertaling Tłumaczenie Mετάφραση Oversættelse Översättning Käännös Aistriúchán Traduzzjoni Prevajanje Vertimas Tõlge Preklad Fordítás Tulkojumi Превод Překlad Prijevod 翻訳 번역 翻译 Перевод