The invention relates to an epitaxial reactor for the large-scale production of wafers, which comprises a high-performance system for use in the photovoltaic industry.

An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed.

The epitaxial reactor allows for in-situ plasma cleaning by chlorine and fluorine containing gaseous species.

An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures (3016).

The invention relates to a system for controlling the positioning of a susceptor (2) rotating in the reaction chamber (3) of an epitaxial reactor.

An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures.

Materials in an epitaxial reactor chamber must withstand temperatures of up to 2 200 °C. For Plansee, that's not a problem.

A set (10) of susceptors (12) having essentially equal outer diameters (14) and different depression diameters (20) is used in a horizontal flow semiconductor epitaxial reactor.

Materials in an epitaxial reactor chamber must withstand temperatures of up to 2 200 °C. For Plansee, that's not a problem.

Materials in an epitaxial reactor chamber must withstand temperatures of up to 2 200 °C. For Plansee, that's not a problem.