The lips (11) are joined by a middle section (12) of the joining profile (10).

The invention further relates to a method for forming a structure consisting of at least two walls, using such a joining profile.

The section is bent into a ring and butt-welded.

The prepared homogenous tin oxide-based transparent pn junction has the current-voltage profile characteristics of a semiconductor pn junction with a wide band gap.

The lips (11) are joined by a middle section (12) of the joining profile (10).

Each of the LEDs' junction currents are controllable to produce a predetermined illumination profile.

The annular blank (7) thus produced is provided with the desired profile according to the pressure-rolling method, is provided with connecting elements (9), and cut open between the same.

A low profile connector for interconnecting a wire carrying conduit to a junction box.

The area of junction is created in part (35) of the extremity (28) provided with an external transversal profile which is essentially convex.

The section is bent into a wheel on section bending machines and after butt-welding the rim is corrected.

In one case, the profile of the blade tip, from a junction root to the tip, forms a convex curve.

The active dopant concentration profile comprises a concentration level and a junction depth.

In one case, the profile of the blade tip, from a junction root to the tip, forms a convex curve.

Each joining member may be configured to provide a transition between the vertically-curving profile of a side wall and the vertically-straight profile of a corresponding end wall.

The joining assembly includes an internal joining tool and an external joining tool.