This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles.
The present invention relates to coated cemented carbide inserts, particularly useful in fine turning of superalloys.
The invention provides a process for producing silicon carbide platelets of low iron content preferably having a size of 20 x 10-4 cm [20 νm] or less, and the platelets so produced.
Circular saw blades for cutting non-ferrous or materials without a homogenous structure are fitted with hard-metal tips.
Commercial road grading bit assemblies use consistent thickness, rectangular carbide inserts brazed to the leading edge of the steel tip.
STMicroelectronics is to buy a majority stake in Swedish silicon carbide (SiC) wafer manufacturer Norstel to secure the entire supply chain for the technology.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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