The elements may comprise, inter alia, pillars (82) of photoresist or spaces on the substrate surrounded and defined by photoresist.

A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes.

Also disclosed are a photoresist composition using such a polymer compound and a method for forming a resist pattern using such a photoresist composition.

The method of forming a photoresist pattern uses the positive photoresist composition.

The invention provides a more uniform photoresist layer and is much more efficient than are current methods in the use of expensive photoresist solutions.

After the ion implanting, the patterned photoresist layer is removed from the substrate.

The photoresist composition further contains an acid sensitive imaging polymer.

The method involves utilizing an assist layer immediately below the photoresist layer.

A low viscosity photoresist layer is then deposited on top of the adhesion layer.

The adhesion layer and low viscosity photoresist layer are then anisotropically etched, and the low viscosity photoresist layer is then removed to expose the adhesion layer.

A photoresist composition which contains a fullerene derivative (A) having two or more malonic ester residues.

The method includes providing a metal substrate, forming a first photoresist film on a top surface of the metal substrate, and forming a plating pattern in the first photoresist film using photolithography.

The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same.

The photoresistive material is dried and exposed to light (112) in the sub-pixel regions.

The remaining copper (16), protected by the photoresist layer (20), remains unexposed to the etchant (32, 42).