The photodetector circuit includes a photodetector and an active filter.
The photodetector may be germanium -based PN (PIN) junction photodetector, a SiGe photodetector, a metal/silicon Schottky barrier photodetector, or any other suitable silicon-based photodetector.
Beneficially, the photodetector is a metal-semiconductor-metal photodetector.
The detector also includes at least first (206) and second (208) photodetectors.
Each phodetector (1) is at least partially formed in the substrate that forms a first electrode of the photodetector.
The system comprises a photo-detector of a radiation, the photo-detector implementing at least one tunable spectral response indicating the sensitivity of the photo-detector as a function of the wavelength.
An optical receiver comprising a photo-detector, wherein said photo-detector is modulated whereby it has a time-variant photo-responsivity following the modulation on the photo-detector.
A fault photo-detector surrounds the emission surface.
The photo-detector is made in the shape of a photodiode.
In this way, a sampling mirror and photo-detector arrangement can be replaced with a photo-detector which provides within its own structure the sampling function.
The photosensor has the ability to self-commission.
The invention relates to a photosensor-chip, a laser-microscope comprising a photosensor-chip and to a method for reading a photosensor-chip.
A relay electrically coupled to the photosensor is responsive to a level of light detected by the photosensor.
A radiation detector device is disclosed that includes a photosensor and a scintillator coupled to the photosensor.
A digital processor, which is electrically connected to the photosensitive detector processes an electronic signal output by the photosensitive detector.
The present invention discloses an optoelectronic detector for light sensing.
a photo detector integrated circuit, and
The photo detector (120) also includes readout electronics (124), which are also part of the photo detector (120).
An Infrared-to-visible upconversion device can include a photodetector and an OLED coupled to the photodetector.
The present invention further relates to a photodetector device.
Each photodetector (1) is at least partially created in the substrate (6) forming a first photodetector electrode.
Methods of forming a filtered photosensor include providing a photosensor and an infrared blocking ink.
The display of a device comprises a photodetector.
A reading circuit is connected to a photodetector (1) via the second terminal of the photodetector (1).
The metal oxide layers render the photodetector stable in air, even in the absence of an encapsulating coating around the photodetector.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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