Application to substrates of indium phosphide.
The trench (14) is filled with indium phosphide (16), and the filled indium phosphide (16) is heated and melted.
The melted indium phosphide (16) is slowly cooled, the (001) crystal plane (15) is used as a seed, and the indium phosphide (16) is recrystallized.
A high-cost indium phosphide wafer must be used.
Indium arsenide is sometimes used together with indium phosphide.
The filter is preferably based on indium phosphide layers and air gaps.
Another frequently used substrate is indium phosphide (InP).
Products include layers of gallium arsenide, indium phosphide and alloys thereof, including gallium indium arsenide and gallium aluminum arsenide.
In a more general sense, it belongs to the InGaAsP quaternary system that consists of alloys of indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), and gallium phosphide (GaP).
The laser and wavelength monitors are integrated together on a single indium phosphide chip.
Preferably, further lattice matched subcells of gallium arsenide, indium gallium phosphide and aluminium gallium arsenide or aluminium indium gallium phosphide are provided.
Preferably, further lattice matched subcells of gallium arsenide, indium gallium phosphide and aluminium gallium arsenide or aluminium indium gallium phosphide are provided.
Another frequently used substrate is Indiumphosphide InP.
Aluminum indium gallium phosphide (AlInGaP) is used for red and yellow.
Disclosed are structures and methods related to a barrier layer for metallization of a selected semiconductor such as indium gallium phosphide (InGaP).
Keywords: indium, Indium Corporation, Bill Jackson, Phil Zarrow, [email protected], high-purity indium, low contamination, semiconductor, indium, CIGS-solar, indium sulfide, fiber optics, indium phosphide
The method further includes forming core shell indium phosphide semiconductor nanocrystals by forming semiconducting shells on the nanocrystals.
Heat generated by the VCSEL (10) dissipates through the cladding layers (12a, 12b), which utilize an indium phosphide material.
In the new study, the membrane consisted of indium phosphide photocathodes and titanium dioxide photoanodes.
An indium phosphide semiconductor substrate (10) is prepared for subsequent growth of epitaxial layers (12 to 16) to form a semiconductor device (5).
The concept put forward in the project involves the use of junctions composed of indium gallium phosphide, gallium arsenide phosphide, silicon-germanium-tin and germanium on silicon.
A hybrid integrated circuit (334) is provided that has a monocrystalline substrate such as silicon and a compound semiconductor layer such as gallium arsenide or indium phosphide.
Semiconductor devices comprising other compound semiconductors such as indium phosphide (InP) and gallium nitride (GaN) may also be produced in accordance with the methods of the present invention.
Red LEDs use the material indium gallium aluminum phosphide and find many uses in electronic displays, indicator lights and other applications.
The method uses commercially available chip-based indium phosphide lasers as opposed to conventional bulk laser modules.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Traduction Translation Traducción Übersetzung Tradução Traduzione Traducere Vertaling Tłumaczenie Mετάφραση Oversættelse Översättning Käännös Aistriúchán Traduzzjoni Prevajanje Vertimas Tõlge Preklad Fordítás Tulkojumi Превод Překlad Prijevod 翻訳 번역 翻译 Перевод