An etch mask is formed on a substrate.

The etch mask comprising at least two sub-mask: a first sub-mask covering the area which substantially should remain after the etching process, and a second sub-mask covering an area to be removed in the etching process.

An etch mask may be used to produce features through a subsequent etching process.

An etch mask (25) is formed on the etching substrate (20) using a photolithography technique.

A method and apparatus for performing a dielectric etch, etch mask stripping, and etch chamber clean.

The present invention includes a glass lithography mask preform.

More specifically, the etch mask defines sidewalls in the glass layer, provides excellent dry etch resistance, and enables easy lift-off of the etch mask from the glass layer.

The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step.

Two embodiments are disclosed herein: the first using amorphous silicon as the etch mask; and the second employing a photoresist as the etch mask.

The ink pattern may be employed as an etching or deposition mask, for example.

A method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber.

The ejection port has an opening shape equivalent to an etching mask pattern.

The method includes the steps of providing an etch mask to the substrate to be etched.

The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.

Features are etched into the dielectric layer through the etch mask using the plasma formed from the etch gas.