Also provided in the present invention is a three-dimensional recordable memory.

Multiple memory levels can be stacked to form a monolithic three dimensional memory array.

A plurality of overlying arrays of memory devices may be stacked on the support to provide a 3-D memory structure in simple manner.

This diode is advantageously used in a monolithic three dimensional memory array.

Provided in the present invention is a separate three-dimensional memory (3D-M).

The rendering is performed on the 3D memory at the chosen rate.

Use with certain erasable memory array technologies is disclosed, particularly certain resistive passive element memory cells, and more particularly in a three-dimensional memory array.

The sense amplifiers are arranged on the substrate underneath the monolithic three-dimensional memory array.

The method is advantageously used in formation of a monolithic three dimensional memory array.

Proposed is a separate three-dimensional memory (separate 3D-M) comprising an intermediate circuit chip.

The memory cell of the present invention can be formed in a monolithic three dimensional memory array, having multiple stacked memory levels formed above a single substrate.

The temporary storage devices are arranged on the substrate underneath the monolithic three-dimensional memory array.

A method to form a highly dense monolithic three dimensional memory array is provided.

In certain exemplary embodiments, a three-dimensional memory array includes multiple memory blocks and array lines traversing horizontally across at least one memory block.

A three dimensional memory device includes a substrate (100) and a semiconductor channel (151).