A first ohmic connection (24) between the first conductor and the third conductor and a second ohmic connection (25) between the second conductor and the third conductor are arranged at a predefined distance from the energy coupling device.

An active electronic device has drain and source electrodes that make ohmic conduct with a layer of a semiconductor.

The contact electrode (16) is annealed in such a manner that the silicon carbide substrate (10) and the contact electrode (16) can be ohmically connected to each other.