The planar vertical waveguide structure (1) with the overlying photoresist layer structure (3) is then etched and the photoresist layer structure (3) is removed from the planar vertical waveguide structure (1).

A gas component which etches the photoresist and a further gas component which etches the semiconductor substrate therebelow are used.

The inventive silica (hetero)poly(co)condensates are usable for a photoresist having positive resist characteristics.

The etching process is thus selective and does not affect any other materials that are not intended to be etched, such as the photoresist used for lithographic structuring.

A falling edge to the surface of the drain area is generated in the layer of photoresist (22) at the gate edge (11).

One advantage of said process is that it is not necessary to always use photosensitive resist.

A high precision joining process for at least two parts uses a photosensitive resist as adhesive.

When the adsorption capacity is known, the thicknesses of the two photosensitive paint coatings are matched to a predetermined pure transmission.

In the prior art, induction coils which can be integrated in chip cards are produced on the basis of a laminate system coated with a photosensitive resist, namely using a subtractive photolithographic etching method.

The anisotropically etched V-shaped positioning groove is filled with polymer material to provide a flat surface which is coated with a photo-lacquer or other structurable polymer.