A variety of interconnections for three dimensional integration is offered by this scheme.
Consequently, it can easily be overgrown with monocrystalline semiconductor layers, thus making three-dimensional integration possible.
A hybrid bonding structure used for three-dimensional integration and a bonding method therefor.
The invention enables transmitting or receiving functions to be achieved in a compact component with three-dimensional integration of extra-high frequency components. .
Components are provided on top of the sacrificial layer by 3D integration with wafer bonding, to connect the components to the connectors.
It also relates to a MEMS device made by 3D integration with wafer bonding comprising first and a second components interconnected by connectors having a length of > 4μm.
According to the inventive method, at least one light source (8) is arranged on a support plate (2) and at least one spectrometer (3) is monolithically produced in a three dimensionally integrated form on said support plate (2).
Consequently, highly efficient three-dimensional integration schemes may be realized.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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