An ion implanter is disclosed.
This capability enables the ion implanter to function as either a high precision medium-current ion implanter or as a high-current ion implanter.
This disclosure describes an ion implanter having a collimator magnet that is configured to shape an ion beam.
The present invention relates to a front plate (27) for an ion source that is suitable for an ion implanter.
An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.
An ion impianter is also provided.
Dose uniformity of a scanning ion implanter is determined.
A scan wheel for an ion implanter adapted for carrying a plurality of semiconductor wafers.
A deceleration lens (7000) is disclosed for use in an ion implanter.
An ion implanter characterized in that it is formed so that a member positioned behind, with respect to a direction of advance of an ion beam, a semiconductor substrate is not irradiated with the ion beam.
The present invention is directed to a method of efficiently cleaning the inside of a target chamber of an ion implanter contamined by a phosphorus implantation process.
An ion implantation process system, including an ion implanter apparatus (110) for carrying out an ion implantation process.
In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source.
Methods and apparatus are provided for automatically tuning a charged particle beam system, such as an ion implanter.
An indirectly heated button cathode for use in the ion source of an ion implanter has a button member (21) formed of a slug piece (40) mounted in a collar piece (41).
An apparatus in combination with a load lock of an ion implanter comprises a cover adjacent an isolation valve slot of the load lock.
In one particular exemplary- embodiment, the technique may be realized as a method for improving performance and extending lifetime of an ion source in an ion implanter with gas dilution.
The electrostatic chuck is configured to repel charged particles (146) from a surface (108) of the electrostatic chuck to limit deposits of the charged particles on the surface when the electrostatic chuck is not supporting any workpiece.
Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.
The invention provides a method and system for determining a pressure compensation factor for use in an ion implanter, which uses one or a small number of test workpieces (21).
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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