Each of the small grids comprises a grid part that functions as a grid, and a non-grid part that is provided at the outer periphery of the grid part and does not function as the grid.
The patterns may include an iso-grid pattern, and ortho-grid pattern, and a hoop-grid pattern.
The conductive grid is formed on the insulating grid.
A grid cell position within a grid.
In order to improve such a method, the projection grid (2) comprises a first grid with a first grid vector (G1) and a second grid with a second grid vector (G2) that is different therefrom.
The gate electrode of the planar gate and the gate electrode of the trench gate are connected on the trench gate.
The gate wire has gate lines, gate electrodes, and gate pads connected to the gate lines.
A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate.
The gate may include a gate dielectric overlying the channel and a gate electrode overlying the gate dielectric.
The gate line assembly has gate lines and gate electrodes.
A first grating is optically coupled to a second grading such that the second grating is rotationally offset from the first grating.
The grill housing includes a unitary grill that has an integrated warming rack.
A grill comprising a front, a rear, a grill base, a grill lid and a grill door.
A grill assembly is coupled to the body and includes a grill (190) and a grill cap (196).
A modular air grill is taught having a removable return register and a removable supply register.
The grill unit (1) includes a grillwork (11), and a grillwork holder (10) holding the grillwork therein and integrated with a drawer part (12).
An intake screen assembly including an intake member, a screen support member, and a screen member coupled to the screen support member.
The gate includes a gate oxide and a conductive material over the gate oxide.
A gate (208) is formed on the gate insulator.
The metal gate may be a pure metal gate or a metal alloy gate such as a metal silicide gate.
The gate stack includes a gate dielectric layer (102) and a gate electrode (104), the gate dielectric layer (102) is on the channel region (1002), the gate electrode (104) is on the gate dielectric layer (102).
The gate cavity is filled with a gate dielectric and a gate electrode.
The double gate includes a first gate electrode (FG) and a second gate electrode (CG).
The gate stack includes a gate dielectric portion and gate electrode portion.
The first gate driver provides the first gate line with a first gate driving signal, and the second gate driver provides the second gate line with a second gate driving signal.
The gate stack includes a gate oxide layer on the silicon layer and a gate electrode layer on the gate oxide layer.
The floating gate and the control gate are metal.
The device comprises a floating gate (16), a control gate (19) and a separate erase gate (10).
A first gate structure (108) includes a gate dielectric layer (112) and a gate (114).
A gate insulating layer covers the gate wire.
The gate stack structures include a dummy gate (104) and a gate dielectric layer (102).
The two first gate structures and the second gate structure are successively arranged in the order of one first gate structure, the second gate structure and the other first gate structure.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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