The limit is calculated as PCDD and PCDF according to the following toxic equivalency factors (TEFs)
The limit is calculated as PCDD and PCDF according to the following toxic equivalency factors (TEFs
The limit is calculated as PCDD and PCDF according to the following toxic equivalency factors (TEFs):
(2) The limit is calculated as PCDD and PCDF according to the following toxic equivalency factors (TEFs):
The limit is calculated as PCDD and PCDF according to the following toxic equivalency factors (TEFs):
The present invention may be embodied as a device that is realized by forming the gate of a field-effect transistor (FET) from a ferromagnetic material, forming a so-called 'Ferromag-FET.'
The module includes two low-pass filters (LPF), two phase lines, an FET switch circuit having a field-effect transistor (FET), and two SAW filters.
An apparatus includes a field-effect transistor (FET).
Nanowire-based field-effect transistors (FETs) and techniques for the fabrication thereof are provided.
A system and method are provided for driving a power field-effect transistor (FET).
40 % of FET resources will be devoted to FET Open.
The channel of the enhancement- mode FET is isolated from the channel of the depletion-mode FET so as to decouple the enhancement-mode FET from the depletion mode FET.
The bipolar/dual FET structure further includes an enhancement-mode FET and a depletion-mode FET situated over the substrate.
The operation unit (20) alternately turns on the FET (7) and the FET (8) such that both the FET (7) and the FET (8) are turned on for merely the period thus calculated.
The LVT and HVT transistors may be N-FETs and/or P-FETs.
After transition has occurred from a state that the FETs 11 and 13 are OFF to a state that a ON/OFF switching of the FET 11 is allowable and the FET 13 is OFF, the FET 13 is maintained at OFF.
to ensure the continuation of the FET programme with all its complementary schemes (FET Open, FET Proactive, FET Flagships) in FP9;
The gate of the FET (103) is connected to the connection point of the resistors (202, 203), and the drain of the FET (103) is connected to the gate of the FET (101) through a resistor (204).
In a converter 1, the source of an FET 11 and the drain of an FET 12 are connected to one end of an inductor L1 while the source of an FET 13 and the drain of an FET 14 are connected to the other end of the inductor L1.
It is an advantage of such FET that pinch-off voltage and current of the FET can be independently tuned.
In this way, the body of the first FET (620) can be extended into the region occupied by the second FET (632) to allow contact to be made to the body of the first FET (620).
The offset drain Fermi-FET can introduce a drift region between the drain region and the Fermi-FET channel that can provide the high voltage and/or high frequency Fermi-FETs, while retaining the Fermi-FET advantages in the channel.
The doped substrate serves as a gate of the FET, the masked off portions of the nanowire serve as channels of the FET and the embedded SiGe regions serve as source and drain regions of the FET.
In a converter 1, the source of an FET 11 and the drain of an FET 12 are connected to one end of an inductor L1 while the source of an FET 13 and the drain of an FET 14 are connected to the other end of the inductor L1.
Applications to FETs are described.
40 % of FET resources will be devoted to FET Open.
The metal gate can lower the threshold voltage of the Fermi-FET without degrading other desirable characteristics of the Fermi-FET.
The array structure includes a plurality of field effect transistors (FETs), where each FET has a gate structure.
An FET switch comprising a single or parallel opposite polarity FETS is illustrated with wells that are driven from internal power rails.
Then, during the time that the OFF-state of the FET 13 is maintained, an electric current is reduced that flows from the drain of the FET 13 through a storage battery 4 to the source of the FET 14.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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