A high-voltage high-power device, in particular, a method of fabricating a semiconductor substrate for fabricating a high-power device.

A high frequency device packing method and package (20) are described wherein coaxial structures are formed from the high frequency device (14) to the via.

Provided is a high-power device having a thermocouple (thermoelectric couple) for measuring the temperature of a transistor constituting a high-power device.

The normally-on device can be a high voltage device and the normally-off device can be a low voltage device.

A high voltage bushing (1) for a high voltage device containing insulating liquid comprises a voltage grading shield (8), improving performance and facilitating manufacturing.

A high-frequency layered part used in a high-frequency device such as a radio communication device and a manufacturing method thereof.

The invention also concerns a high voltage device comprising such a bushing.

In another arrangement, the fluid control device can receive low pressure fluid and deliver high pressure fluid to a high pressure device.

The high-frequency device has impedance with respect to the high-frequency signal at the terminals (P1, P2).

A high-voltage apparatus has at least one high-voltage component and at least one current sensor (2), which is assigned to a corresponding high-voltage component.

The invention also concerns a high voltage bushing comprising such a contact, and a high voltage device comprising such a bushing.

A high temperature device breaks down the complex volatile matter and backscatter.

The high-voltage apparatus has at least one transmission apparatus (23), to which at least one corresponding current sensor (20) is assigned.

Further, this method provides a highly reliable high-voltage device.

The high voltage device is biased to conduct a current during regulator operation.