IC2 is a voltage-controlled oscillator (VCO) with integrated varactor (a.k.a. varicap diode).
The coupling network (CNW) lacks a varicap diode but includes a coupling resistor (Rc) in series with a coupling capacitor (Cc).
As a result, the phase detector reduces the DC voltage applied to the varicap diode, thereby increasing its capacitance.
From there, the attenuated signal is fed via another 10μF capacitor and two 10kΩ resistors to varicap diode VC1.
IC1 and the varicap diode (VC1) are polarised devices, so be sure to orient them as shown on the overlay.
The N-gate/P-well varactor structure includes P+ implant regions formed in a P-well implant layer of the varactor.
The P-gate/N-well varactor structure includes N+ implant regions (16) formed in an N-well implant layer (17) of the varactor.
According to the number of varactors selected in the shunt varactor, B, this frequency step can be made programmable.
O Diced: this variant is heartier than the other two.
Varactor Diode Varactor diode is called varicap or variable capacitance diode.
The tuning varactor preferably has a wide tuning capacitance range.
The P+ implant regions comprise the source and the drain of a varactor.
The varactor structure is completely electrically isolated from the substrate (20) of the IC by an oxide layer (18) of the SOI substrate and by oxide-filled trenches formed on both sides of the varactor structures.
The N+ implant regions (6) comprise the source and the drain of a varactor.
The varactor tuned antennas intercept components of electromagnetic radiation that are substantially orthogonally polarized.
A low resistance capacitor electrode makes it possible to obtain a high quality capacitor or varactor.
The LC-resonator circuit includes at least one tuning varactor and two high Q inductors.
A varactor diode having a stepped capacitance-voltage profile, formed in heterostructural integrated circuit technology.
A low power switched diversity antenna system (200) includes two varactor tuned antennas (205, 207), each including an antenna element and a varactor.
The invention relates to semiconductor devices, specifically varicap (varactor) semiconductor devices whose reactance can be altered by varying the voltage.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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