Dictionnaire français - anglais

électronique et électrotechnique - iate.europa.eu
All-solution-basedheterogeneous material formationfor p–n junction diodes...challenge.This study proposes an approach for solution-based devices in whicha p–n junction diode is fabricated using a solution-based InZnOthin film for the n-type semiconductor and a carbon nanotube networkfilm for the p-type semiconductor....
électronique et électrotechnique - core.ac.uk - PDF: figshare.com
électronique et électrotechnique - iate.europa.eu
Porous silicon carbide (sic) semiconductor device... In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide....
général - core.ac.uk - PDF: hdl.handle.net
A novel silicon electro-optic device for sensor applications... Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry....
Solid state neutron detectors... The Lithium and Boron are used as diffusants, for P and N type Silicon respectively, to create p-n junction diode detectors with efficiencies of the order of 1

Dictionnaire français - anglais

électronique et électrotechnique - iate.europa.eu
All-solution-basedheterogeneous material formationfor p–n junction diodes...challenge.This study proposes an approach for solution-based devices in whicha p–n junction diode is fabricated using a solution-based InZnOthin film for the n-type semiconductor and a carbon nanotube networkfilm for the p-type semiconductor....
électronique et électrotechnique - core.ac.uk - PDF: figshare.com
électronique et électrotechnique - iate.europa.eu
Porous silicon carbide (sic) semiconductor device... In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide....
général - core.ac.uk - PDF: hdl.handle.net
A novel silicon electro-optic device for sensor applications... Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry....
Solid state neutron detectors... The Lithium and Boron are used as diffusants, for P and N type Silicon respectively, to create p-n junction diode detectors with efficiencies of the order of 1{!{{PREREND}}!}gt;, 255 The fission of U is used for the detection of both slow and 255fast neutrons....
Silicon carbide semiconductor technology for high temperature and radiation environments... Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response
électronique et électrotechnique - iate.europa.eu
Electronic properties of armchair black phosphorene nanoribbons edge-modified by transition elements v, cr, and mn... The Mn/Cr-APNR heterojunction may be used to fabricate spin p-n diode where strong rectification acts only on one spin
électronique et électrotechnique / communication - core.ac.uk - PDF: doaj.org
A p-ge.../n-si heterojunction diode grown by molecular beam epitaxyWe report on the fabrication and characterization of the first p-n diode made from a heterojunction of epitaxial p-type Ge0:998C0:002 on an n-type Si substrate....

Publications scientifiques

P-gan hetero-junction diode fabricated by ultra-high vacuum sputterWe investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter....
général - core.ac.uk - PDF: www.ingentaconnect.com
Analysis of high-voltage trench bipolar junction diode (tbjd)In this paper, a new high-voltage power diode structure, called the Trench Bipolar Junction Diode (TBJD) is proposed and analyzed with the aid of 2-D numerical simulations and experiments....
général - core.ac.uk - PDF: www.scopus.com
Coupling two-dimensional mote2 and ingaznothin-film materials for hybrid pn junction and cmos invertersWe report the fabricationof hybrid PN junction diode and complementary(CMOS) inverters, where 2D p-type MoTe2 and n-type thinfilm InGaZnO (IGZO) are coupled for each device process....
général - core.ac.uk - PDF: figshare.com
Analysis of the electrical properties of cr/n-basi2 schottky junction and n-basi2/p-si heterojunction diodes for solar cell applications... As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2....
général - core.ac.uk - PDF: core.ac.uk
Simulation of tunnel current in an armchair graphene nanoribbon-based p-n diode for undergraduate physics studentsAbstract- Simulation of tunnel current flowing in a p-n diode made from armchair graphene nanoribbons (AGNRs) was built....
général - core.ac.uk - PDF: atlantis-press.com

Synonymes et termes associés français

Exemples français - anglais

électronique et électrotechnique - iate.europa.eu
électronique et électrotechnique - iate.europa.eu
électronique et électrotechnique - iate.europa.eu
[...]


1 milliard de traductions classées par domaine d'activité en 28 langues
gt;, 255 The fission of U is used for the detection of both slow and 255fast neutrons.
...
Silicon carbide semiconductor technology for high temperature and radiation environments... Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response
électronique et électrotechnique - iate.europa.eu
Electronic properties of armchair black phosphorene nanoribbons edge-modified by transition elements v, cr, and mn... The Mn/Cr-APNR heterojunction may be used to fabricate spin p-n diode where strong rectification acts only on one spin
électronique et électrotechnique / communication - core.ac.uk - PDF: doaj.org
A p-ge.../n-si heterojunction diode grown by molecular beam epitaxyWe report on the fabrication and characterization of the first p-n diode made from a heterojunction of epitaxial p-type Ge0:998C0:002 on an n-type Si substrate....

Publications scientifiques

P-gan hetero-junction diode fabricated by ultra-high vacuum sputterWe investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter....
général - core.ac.uk - PDF: www.ingentaconnect.com
Analysis of high-voltage trench bipolar junction diode (tbjd)In this paper, a new high-voltage power diode structure, called the Trench Bipolar Junction Diode (TBJD) is proposed and analyzed with the aid of 2-D numerical simulations and experiments....
général - core.ac.uk - PDF: www.scopus.com
Coupling two-dimensional mote2 and ingaznothin-film materials for hybrid pn junction and cmos invertersWe report the fabricationof hybrid PN junction diode and complementary(CMOS) inverters, where 2D p-type MoTe2 and n-type thinfilm InGaZnO (IGZO) are coupled for each device process....
général - core.ac.uk - PDF: figshare.com
Analysis of the electrical properties of cr/n-basi2 schottky junction and n-basi2/p-si heterojunction diodes for solar cell applications... As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2....
général - core.ac.uk - PDF: core.ac.uk
Simulation of tunnel current in an armchair graphene nanoribbon-based p-n diode for undergraduate physics studentsAbstract- Simulation of tunnel current flowing in a p-n diode made from armchair graphene nanoribbons (AGNRs) was built....
général - core.ac.uk - PDF: atlantis-press.com

Synonymes et termes associés français

Exemples français - anglais

électronique et électrotechnique - iate.europa.eu
électronique et électrotechnique - iate.europa.eu
électronique et électrotechnique - iate.europa.eu
[...]


1 milliard de traductions classées par domaine d'activité en 28 langues